Samsung
SAMSUNG - SOURCING SAMSUNG 4GB DDR3-1600 UNBUFFERED 2RX8 1.35V 204PIN CL11
Out of Stock
Samsung M471B5273EB0-YK0 4GB DDR3-1600 204-Pin SO-DIMM | Laptop Memory
Samsung
MPN: M471B5273EB0-YK0
$80.73
Free shipping on orders over $500
Authorized Dealer — Full manufacturer warranty
Key Features
- 4 GB DDR3 SDRAM capacity
- 1,600 MHz memory speed
- 204-pin SO-DIMM form factor
- Unbuffered module design
- 2Rx8 dual-rank organization
- 1.35 V operating voltage
- CL11 latency timing
- Improve everyday responsiveness with 4 GB DDR3-1600 capacity
Extend the usable life of compatible laptops with Samsung M471B5273EB0-YK0 memory. This 4 GB DDR3-1600 SO-DIMM is designed for systems that need a practical capacity increase while staying within the electrical and mechanical limits of established notebook platforms. Its 1.35 V low-voltage design helps reduce power draw compared with standard-voltage modules, making it a sensible fit for mobile systems where efficiency matters.
Built as an unbuffered, dual-rank module with a 2Rx8 organization, this part is aimed at mainstream client devices that support DDR3 notebook memory. The 204-pin form factor and CL11 timing align with common laptop upgrade paths, giving IT teams a direct replacement option for aging endpoints that still need reliable day-to-day performance for office applications, browser workloads, and remote access tools.
For procurement teams managing mixed fleets, this Samsung module offers a clear, specification-matched upgrade path for supported systems. It is not a generic substitute; it is a targeted memory component for environments where compatibility, power profile, and predictable behavior matter more than headline speed claims.
Ideal For
- Upgrade supported business laptops that need more memory for daily productivity
- Replace failed notebook RAM in legacy DDR3 client systems
- Standardize spare parts for mixed fleets with 204-pin SO-DIMM requirements
- Extend the service life of older mobile workstations used for light office workloads
Why This Product
- 1Lower-voltage 1.35 V design for compatible mobile systems
- 2204-pin SO-DIMM format for notebook installations
- 3Unbuffered 2Rx8 layout for mainstream client platforms
- 4DDR3-1600 speed for legacy laptop upgrade paths





